Title :
Strong luminescence from erbium in Si/Si1-xGex/Si quantum well structures
Author :
Huda, M.Q. ; Peaker, A.R. ; Evans-Freeman, J.H. ; Houghton, D.C. ; Gillin, W.P.
Author_Institution :
Centre for Electron. Mater., Manchester Univ., UK
fDate :
6/19/1997 12:00:00 AM
Abstract :
Sharp, strong luminescence has been obtained from erbium in silicon-germanium quantum well structures. The quantum well layers were implanted with erbium, followed by amorphisation using a silicon implant at 77 K. The structures were then recrystallised by solid phase epitaxial regrowth at 550°C. Compared with bulk silicon systems, stronger erbium activity was observed in the quantum well host
Keywords :
Ge-Si alloys; amorphisation; elemental semiconductors; erbium; ion implantation; photoluminescence; recrystallisation; semiconductor growth; semiconductor materials; semiconductor quantum wells; silicon; solid phase epitaxial growth; 550 C; 77 K; Si-SiGe-Si:Er; Si/Si1-xGex/Si:Er; amorphisation; ion implantation; luminescence; quantum well structures; recrystallisation; solid phase epitaxial regrowth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970750
