Determining Junction Temperature in InGaN Light-Emitting Diodes Using Low Forward Currents

Author

Siqi Lin ; Tienmo Shih ; Yijun Lu ; Yulin Gao ; Lihong Zhu ; Guolong Chen ; Biqing Wu ; Ziquan Guo ; Jihong Zhang ; Xianguang Fan ; Chang, Richard Rugin ; Zhong Chen

Author_Institution

Fujian Eng. Res. Center for Solid-State Lighting, Xiamen Univ., Xiamen, China

Volume

60

Issue

11

fYear

2013

fDate

Nov. 2013

Firstpage

3775

Lastpage

3779

Abstract

We propose an experimental method that determines junction temperatures in light-emitting diodes by measuring currents while holding the low forward voltages constant. In this procedure, we first calibrate current-temperature-rela- tionship parameters under the condition of negligible thermal generation. With one of the two parametric values, we discover the existence of a forward voltage peak that yields most sensitive measurements of the junction temperature. Results show a nearly linear relationship between the algorithmic currents and temperature reciprocals with high testing precision.

Keywords

calibration; electric current measurement; indium compounds; light emitting diodes; temperature measurement; InGaN; calibration; current measurement; current-temperature-relationship parameter; junction temperature measurement; light-emitting diode; low forward current; low forward voltage constant; thermal generation; Current measurement; Educational institutions; Junctions; Light emitting diodes; Temperature measurement; Temperature sensors; Voltage measurement; Forward current; InGaN; junction temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2280644

Filename

6601657