Title :
Theoretical Investigation of Terahertz GaN Mesa Transferred-Electron Device by Means of Time-Domain Energy/Momentum Modeling
Author :
Dalle, Christophe ; Dessenne, François ; Thobel, Jean-Luc
Author_Institution :
Inst. d´´Electron. de Microelectonique et de Nanotechnol., Villeneuve d´´Ascq, France
Abstract :
The potential of N+NN+ GaN transferred-electron devices of mesa type operating in the accumulation layer transit-time mode at 1 THz is investigated by means of 1-D time-domain energy/momentum numerical modeling. GaN transport parameters are specified. The device structure has been optimized. The RF operating mode is analyzed. The RF emitted performance demonstrates that such a diode is a potential candidate for the realization of continuous-wave cooled or pulsed low-power sources at 1 THz. Moreover, because of both electronic and thermal limitations, the maximum achievable operating frequency is close to 1 THz.
Keywords :
Gunn devices; III-V semiconductors; accumulation layers; gallium compounds; submillimetre wave devices; terahertz wave devices; time-domain analysis; wide band gap semiconductors; 1D time-domain energy/momentum numerical modeling; GaN; GaN transport parameters; RF emitted performance; RF operating mode; accumulation layer transit-time mode; continuous-wave cooled sources; diode; electronic limitations; frequency 1 THz; pulsed low-power sources; terahertz GaN mesa transferred-electron device; thermal limitations; Gallium nitride; Oscillators; Performance evaluation; Radio frequency; Thermal resistance; Accumulation layer and transit-time operating mode; terahertz GaN transferred-electron device (TED); time-domain energy-momentum modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2218111
