Title :
High speed opto-electronic neural network
Author :
Barnes, M.N. ; Healey, P. ; Mckee, Paul ; Rejman-Greene, M.A.Z. ; Scott, E.G. ; Webb, R.P. ; Wood, David
Author_Institution :
British Telecom Labs., Ipswich, UK
fDate :
7/19/1990 12:00:00 AM
Abstract :
The first opto-electronic neural network, employing InGaAs/InP based, multi-quantum well, surface modulator/detector arrays and operating at speeds above 10 Mbit/s is reported. The network uses a novel architecture that has a computer generated holographic weight matrix outside the modulator and detector layers.
Keywords :
III-V semiconductors; computer-generated holography; gallium arsenide; indium compounds; integrated optoelectronics; neural nets; optical modulation; photodetectors; semiconductor quantum wells; InGaAs-InP; computer generated holographic weight matrix; multi-quantum well; opto-electronic neural network; surface modulator/detector arrays;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900718
