Title :
High-efficiency GaAs microwave power MESFETs with an n+n-n doping formed by buried-shallow-implant (BSI)
Author :
Liu, S.G. ; Taylor, G.C. ; Klatskin, J. ; Camisa, R.L. ; Capewell, D.R.
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
Abstract :
GaAs power FETs have been fabricated with an n+n-n doping profile formed by a new buried-shallow-implant (BSI) process. This technique, which buries a thin precisely controlled active layer below the less critical capping layers, has produced high-efficiency devices with gate-drain breakdown voltages 30% higher than similarly processed all-implanted controls. Power-added efficiencies of 42% at 12 GHz, 46% at 10 GHz, and 52% at 8.5 GHz were measured from an initial test sample at an output power level of 200 mW. MMIC feedback amplifiers fabricated on the same wafer have also shown high-efficiency performance.
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; gallium arsenide; ion implantation; power transistors; solid-state microwave devices; 10 GHz; 12 GHz; 200 mW; 42 percent; 46 percent; 52 percent; 8.5 GHz; GaAs; MMIC; active layer; buried-shallow-implant; capping layers; feedback amplifiers; gate-drain breakdown voltages; high-efficiency devices; n +n -n doping; output power level; power MESFETs; power-added efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900882