DocumentCode :
1316191
Title :
Very low threshold current AlGaInP/GaxIn1-xP strained single quantum well visible laser diode
Author :
Katsuyama, Tomokazu ; Yoshida, Isao ; Shinkai, J. ; Hashimoto, Jun ; Hayashi, H.
Author_Institution :
Optoelectron. R&D Lab., Sumitomo Electr. Ind. Ltd., Yokohama, Japan
Volume :
26
Issue :
17
fYear :
1990
Firstpage :
1375
Lastpage :
1377
Abstract :
The successful operation of a separate confinement heterostructure (SCH) AlGaInP/GaxIn1-xP (x=0.43) strained single quantum well (SSQW) laser has been achieved for the first time. A threshold current of 18 mA at 25 degrees C, the lowest value ever reported for AlGaInP/GaInP lasers, was obtained by a 10*200 mu m index guided laser diode at an emission wavelength of 691 nm.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; semiconductor junction lasers; semiconductor quantum wells; 10 micron; 18 mA; 200 micron; 25 C; 691 nm; AlGaInP-Ga xIn 1-xP; SCH; emission wavelength; index guided laser diode; low threshold current; operation; semiconductors; separate confinement heterostructure; strained single quantum well; visible laser diode;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19900884
Filename :
82993
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1316191
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