The Effect of Adjacent Bit-Line Cell Interference on Random Telegraph Noise in nand Flash Memory Cell Strings

Author

Joe, Sung-Min ; Jeong, Min-Kyu ; Jo, Bong-Su ; Han, Kyoung-Rok ; Park, Sung-Kye ; Lee, Jong-Ho

Author_Institution

Inter-Univ. Semicond. Res. Center, Seoul Nat. Univ., Seoul, South Korea

Volume

59

Issue

12

fYear

2012

Firstpage

3568

Lastpage

3573

Abstract

The effect of adjacent bit-line (BL) cell interference on BL current fluctuation (ΔI_BL = high I_BL - low I_BL) due to random telegraph noise (RTN) in floating-gate nand Flash cell strings is characterized. It was found that the electron current density (Je) of a read cell can be appreciably different depending on the position in the channel width direction because of the interference from adjacent BL cells. The interference can be controlled by the state (program or erase) of the adjacent cells. We verified that ΔI_BL due to RTN increases as a high-J_e position is controlled to be close to a trap position in 32-nm nand Flash memory strings. Finally, it was also shown that the adjacent cell interference affects not only ΔI_BL but also the ratio of capture and emission time constants [ln(τc/τe)].

Keywords

adjacent channel interference; flash memories; logic gates; noise; telegraphy; BL current fluctuation; NAND flash memory cell string; adjacent bit-line cell interference effect; channel width direction; floating-gate NAND flash cell string; high-J_e position; random telegraph noise; Electron devices; Electron traps; Electrostatics; Flash memory; Interference; Logic gates; Noise measurement; BL interference; Bit-line (BL) current fluctuation; capture and emission; floating gate; nand Flash memory; random telegraph noise (RTN);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2219866

Filename

6329941