Title :
Current-reused divide-by-3 injection-locked frequency divider in 65 nm CMOS
Author :
Lee, I-Ting ; Wang, Ching-Hung ; Liu, Shen-Iuan
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A current-reused divide-by-3 injection-locked frequency divider (ILFD) is realised in a 65 nm CMOS process. This divide-by-3 ILFD achieves the input locking range from 117.45 to 118.38 GHz and its power consumption is 12 mW for a supply of 1.3 V excluding buffers and the biasing circuit. This divide-by-3 ILFD achieves the higher operational frequency and lower power dissipation.
Keywords :
CMOS integrated circuits; field effect MIMIC; frequency dividers; CMOS process; current-reused injection-locked frequency divider; divide-by-3 injection-locked frequency divider; frequency 117.45 GHz to 118.38 GHz; operational frequency; power 12 mW; power dissipation; size 65 nm; voltage 1.3 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.1658
