DocumentCode :
1316907
Title :
GaAs/Al0.3Ga0.7As multiquantum well dual focus Fresnel lens-modulator
Author :
Xu, J. ; Qasaimeh, O. ; Bhattacharya, P.K. ; Huffaker, D. ; Deppe, D.
Author_Institution :
Dept. of Electr. Eng., Michigan Univ., Ann Arbor, MI, USA
Volume :
36
Issue :
1
fYear :
2000
fDate :
1/6/2000 12:00:00 AM
Firstpage :
76
Lastpage :
77
Abstract :
A bias-dependent dual focus Fresnel lens-modulator, based on the quantum confined Stark effect in a GaAs/Al0.3Ga0.7As multiquantum well pin diode, is demonstrated. A focused intensity modulation of a factor of 7, primarily due to the electroabsorption effect, is obtained with a bias change of 12 V
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; intensity modulation; lenses; p-i-n photodiodes; quantum confined Stark effect; quantum well devices; semiconductor quantum wells; GaAs-Al0.3Ga0.7As; GaAs/Al0.3Ga0.7As multiquantum well dual focus Fresnel lens-modulator; bias change; bias-dependent dual focus Fresnel lens-modulator; electroabsorption effect; focused intensity modulation; multiquantum well dual focus Fresnel lens-modulator; multiquantum well pin diode; quantum confined Stark effect;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20000137
Filename :
830531
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1316907
بازگشت