• DocumentCode
    1316985
  • Title

    Ti/Pt/Au ohmic contacts on p-type GaN/AlxGa1-xN superlattices

  • Author

    Zhou, L. ; Ping, A.T. ; Khan, F. ; Osinsky, A. ; Adesida, I.

  • Author_Institution
    Microelectron. Lab., Illinois Univ., Urbana, IL, USA
  • Volume
    36
  • Issue
    1
  • fYear
    2000
  • fDate
    1/6/2000 12:00:00 AM
  • Firstpage
    91
  • Lastpage
    93
  • Abstract
    The electrical characteristics of Ti/Pt/Au contacts on p-type GaN/ AlxGa1-xN (x=0.10 and 0.20) superlattices (SL) have been investigated. Current-voltage and specific contact resistance measurements indicate enhanced p-type doping in the superlattice structures compared to that in GaN. Ti/Pt/Au is demonstrated to be an effective ohmic metallisation scheme for GaN/AlxGa1-x N superlattices. A low specific contact resistance of 4.6×10 -4 Ωcm2 is reported for unalloyed Ti/Pt/Au on an GaN/Al0.2Ga0.8N SL
  • Keywords
    III-V semiconductors; aluminium compounds; contact resistance; gallium compounds; gold; ohmic contacts; platinum; semiconductor device metallisation; semiconductor superlattices; titanium; wide band gap semiconductors; GaN-Al0.1Ga0.9N; GaN-Al0.2Ga0.8N; Ti-Pt-Au; Ti/Pt/Au ohmic contacts; current-voltage characteristics; enhanced p-type doping; ohmic metallisation scheme; p-type GaN/AlxGa1-xN superlattices; specific contact resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000028
  • Filename
    830542
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1316985