DocumentCode :
1316989
Title :
Ultrafast coherent all-optical switching in quantum-well semiconductor microcavity
Author :
De Matos, C. ; Pugnet, M. ; Le Corre, A.
Author_Institution :
Lab. d´´Analyse et d´´Archit. des Syst., CNRS, Toulouse, France
Volume :
36
Issue :
1
fYear :
2000
fDate :
1/6/2000 12:00:00 AM
Firstpage :
93
Lastpage :
94
Abstract :
Picosecond degenerate four-wave mixing experiments at room temperature in a GaInAs-GaInAsP multiple quantum well embedded in a microcavity are presented. An input diffraction efficiency of 2% with only 1 μJ/cm2 pump fluence is achieved. The authors show that the diffraction phenomenon is ultrafast and coherent. For a photon energy 30 meV below the exciton band edge and for low pump intensities (1 μJ/cm2), the diffraction phenomenon is not perturbed by strong and spatially uniform pump pulse pre-illumination. This result demonstrates the potential of semiconductor microcavities for the realisation of ultrafast, sensitive and coherent devices
Keywords :
Fabry-Perot resonators; III-V semiconductors; Stark effect; gallium arsenide; high-speed optical techniques; indium compounds; microcavity lasers; multiwave mixing; optical switches; quantum well lasers; semiconductor quantum wells; 2 percent; Fabry-Perot microcavity; GaInAs-GaInAsP; GaInAs-GaInAsP MQW microcavity; exciton band edge; input diffraction efficiency; low pump intensity; optical Stark effect; photon energy; picosecond degenerate four-wave mixing; pump fluence; room temperature; semiconductor microcavities; spatially uniform pump pulse pre-illumination; ultrafast coherent all-optical switching; ultrafast coherent diffraction phenomenon;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20000118
Filename :
830543
Link To Document :
بازگشت