Title :
Barrier height enhancement of InP Schottky junctions by treatment with photo-decomposed PH3
Author :
Sugino, Takushi ; Ito, H. ; Shirafuji, J.
Author_Institution :
Dept. of Electr. Eng., Osaka Univ., Japan
Abstract :
Au-InP Schottky junctions are formed on a surface treated by ArF excimer laser photolytic process of phosphine (PH3) gas. The Schottky junction has a metal-insulator-semiconductor (MIS) structure because of the existence of a thin P layer deposited on the InP surface. The barrier height increases to 0.65 eV and the reverse current is reduced by more than two orders of magnitude compared with the case of Schottky junctions without photolytic treatment. The Richardson constant of the novel Schottky junction is evaluated as 0.126 A cm-2 K-2 from the temperature dependence of the saturation current.
Keywords :
III-V semiconductors; Schottky effect; gold; indium compounds; metal-insulator-semiconductor structures; phosphorus compounds; photolysis; semiconductor-metal boundaries; surface treatment; ArF; ArF excimer laser photolytic process; Au-InP; InP surface; MIS; PH 3; Richardson constant; Schottky junction; Schottky junctions; barrier height; photo-decomposed PH 3; photolytic treatment; reverse current; saturation current; temperature dependence;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901124
