Title :
Monte Carlo study of the dynamic breakdown effects in HEMT´s
Author :
Di Carlo, Aldo ; Rossi, Lorenzo ; Lugli, Paolo ; Zandler, Günther ; Meneghesso, Gaudenzio ; Jackson, Mike ; Zanoni, Enrico
Author_Institution :
Dipt. di Ingegneria Elettronica, Rome Univ., Italy
fDate :
4/1/2000 12:00:00 AM
Abstract :
We present a theoretical investigation of the near-breakdown scenario in pseudomorphic high electron mobility transistors (HEMT´s). We show that the main mechanism for the enhanced drain current is a parasitic bipolar effect due to holes, generated by impact ionization, which accumulate in the channel and in the substrate close to the source contact. The dynamic of this charge accumulation and of the consequent drain current increase is studied by means of a two-dimensional (2-D) Poisson Monte Carlo simulator.
Keywords :
Monte Carlo methods; high electron mobility transistors; impact ionisation; semiconductor device breakdown; semiconductor device models; 2D Poisson Monte Carlo simulator; charge accumulation; drain current enhancement; dynamic breakdown effects; high electron mobility transistors; impact ionization generated holes; near-breakdown scenario; parasitic bipolar effect; pseudomorphic HEMT; source contact; Breakdown voltage; Charge carrier processes; Electric breakdown; Gallium arsenide; HEMTs; Heterojunctions; Impact ionization; MESFETs; Monte Carlo methods; Two dimensional displays;
Journal_Title :
Electron Device Letters, IEEE
