Title :
Novel AlInAsSb/InGaAs heterostructure for double-barrier resonant tunneling diode
Author :
Yan-Kuin Su ; Chuing-Liang Lin ; Kuo-Ming Wu
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
fDate :
4/1/2000 12:00:00 AM
Abstract :
We propose an unstrained Al0.66In0.34As0.85Sb0.15/In 0.53Ga0.47As heterostructure for double-barrier resonant tunneling diode. A peak-to-valley current ratio of 22.3 and a peak current density of 8.9 kA/cm2 were achieved for the unstrained Al0.66In0.34As0.85Sb0.15/In 0.53Ga0.47As double-barrier resonant tunneling diode at room temperature
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well devices; resonant tunnelling diodes; Al0.66In0.34As0.85Sb0.15 -In0.53Ga0.47As; AlInAsSb/InGaAs heterostructure; MQW structure; current-voltage characteristics; double-barrier resonant tunneling diode; peak current density; peak-to-valley current ratio; Absorption; Current density; Gallium arsenide; Heterojunctions; Indium gallium arsenide; Indium phosphide; Ohmic contacts; Resonant tunneling devices; Semiconductor diodes; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
