IDDQ-VDD signature for CMOS circuits with bridging defects

I_DDQ-V_DD signature differences between combinational and sequential CMOS circuits with bridging defects are presented. As V_DD increases in combinational circuits with a bridging defect, the I_DDQ of the defect subdomain increases monotonically as expected, and the rest of the circuit presents one or more local I_DDQ maximums. In sequential circuits with bridging defects connecting control loop nodes the V_DD-I_DDQ signature presents intervals of a constant non-defective I_DDQ value