Title :
The effect of deposition conditions on the radiation tolerance of BPSG films
Author :
Fuller, Robert ; Evans, Howard ; Gamlen, Carol ; Czagas, Bill ; Morrison, Michael ; Decrosta, David ; Lowry, Robert ; Lenahan, Patrick ; Frye, Christopher
Author_Institution :
Harris Semicond., Melbourne, FL, USA
fDate :
12/1/1996 12:00:00 AM
Abstract :
A study has been conducted of the effects of deposition conditions on the radiation hardness of borophosphosilicate glass (BPSG). Films deposited by two common deposition techniques were evaluated using gamma cell testing, electron spin resonance (ESR), and capacitance voltage (CV) measurements. The results indicate that two stoichiometrically similar films can differ greatly in radiation tolerance depending on the deposition conditions
Keywords :
BiCMOS integrated circuits; CVD coatings; borosilicate glasses; capacitance; gamma-ray effects; glass structure; paramagnetic resonance; phosphosilicate glasses; plasma CVD; 60Co source; B2O3-P2O5-SiO2; BPSG; BPSG films; BiCMOS test structures; atmospheric pressure CVD; capacitance voltage measurements; charge injection; deposition conditions; electron spin resonance; gamma cell testing; plasma enhanced CVD; radiation hardness; radiation tolerance; stoichiometrically similar films; BiCMOS integrated circuits; Boron; Capacitance-voltage characteristics; Chemical vapor deposition; Glass; Paramagnetic resonance; Semiconductor devices; Semiconductor films; Substrates; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
