Title :
Proposed two-level Acceptor-Donor (AD) center and the nature of switching traps in irradiated MOS structures
Author :
Pershenkov, V.S. ; Cherepko, S.V. ; Sogoyan, A.V. ; Belyakov, V.V. ; Ulimov, V.N. ; Abramov, V.V. ; Shalnov, A.V. ; Rusanovsky, V.I.
Author_Institution :
Moscow Eng. Phys. Inst., Russia
fDate :
12/1/1996 12:00:00 AM
Abstract :
A phenomenological model of switching traps in irradiated metal-oxide-semiconductor (MOS) structures is presented. After electron capture, the E´γ center is supposed to be transformed into a new defect that is responsible for switching behavior. This new defect is assumed to have two energy levels (acceptor- and donor-like) and could easily communicate with substrate free carriers. The energy level position of the E´γ center, latent build-up of interface traps and negative oxide-trapped charge are also discussed
Keywords :
MIS structures; MOSFET; X-ray effects; defect states; electron traps; hole traps; interface states; E´γ center; MOS structures; MOSFET; Si-SiO2; X-ray irradiation; defect; electron capture; energy levels; interface traps; negative oxide-trapped charge; phenomenological model; switching traps; two-level acceptor-donor center; Annealing; Communication switching; Electron traps; Energy states; FETs; Instruments; MOSFET circuits; Paramagnetic resonance; Physics; Radioactive decay;
Journal_Title :
Nuclear Science, IEEE Transactions on
