• DocumentCode
    13188
  • Title

    Broadband high performance laterally diffused metal–oxide–semiconductor power amplifier for mobile two-way radio applications

  • Author

    Kumar, Narendra ; Anand, Lokesh

  • Author_Institution
    Dept. of Electr. Eng., Univ. Malaya, Kuala Lumpur, Malaysia
  • Volume
    9
  • Issue
    4
  • fYear
    2015
  • fDate
    7 2015
  • Firstpage
    283
  • Lastpage
    289
  • Abstract
    This paper highlights achievement of broadband high performance power amplifier (PA) line up for mobile two-way radio applications. In typical two-way radio applications the input radio-frequency signal to the first PA stage comes directly from the voltage controlled oscillator, with typically 3 dBm power. Owing to high output power requirement (~80 W) of mobile radio applications, up to three PA device stages are normally cascaded (pre-driver, driver and final PA stage). The key point in the design of the PA line up concerns the final stage. Here, this paper introduces a design methodology based on parallel-combined impedance matching technique (from theoretical derivation) enables the designers to develop broadband PA with actual PA device impedance (implementation of new generation laterally diffused metal-oxide-semiconductor device). Experimental results demonstrated output power of ~80 W and gain of 45 dB, while preserving efficiency of 55% over the bandwidth from 760 to 870 MHz. According to author´s knowledge, this amplifier demonstrated highest efficiency with 13 V DC supply (operating at 80 W) in UHF broadband frequency with high gain operation (more than 45 dB) up to date.
  • Keywords
    MIS devices; UHF power amplifiers; impedance matching; mobile radio; power semiconductor devices; UHF broadband frequency; bandwidth 760 MHz to 870 MHz; broadband high performance power amplifier; efficiency 55 percent; laterally diffused metal-oxide-semiconductor power amplifier; mobile two-way radio applications; parallel-combined impedance matching technique; power 80 W; voltage 13 V;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices & Systems, IET
  • Publisher
    iet
  • ISSN
    1751-858X
  • Type

    jour

  • DOI
    10.1049/iet-cds.2014.0206
  • Filename
    7156294