DocumentCode :
1318818
Title :
Electron spin resonance characterization of trapping centers in Unibond buried oxides
Author :
Conley, J.F., Jr. ; Lenahan, P.M. ; Wallace, B.D.
Author_Institution :
Commercial Syst., Dynamics Res. Corp., Beaverton, OR, USA
Volume :
43
Issue :
6
fYear :
1996
fDate :
12/1/1996 12:00:00 AM
Firstpage :
2635
Lastpage :
2638
Abstract :
Electron spin resonance and capacitance vs. voltage measurements are used to evaluate the radiation response of Unibond buried oxides. When damaged by hole injection, it is found that Unibond buried oxides exhibit a rough correspondence between E´ centers and positive charge as well as generation of Pb centers at the Unibond buried oxide/Si interface. In these respects, Unibond buried oxides qualitatively resemble thermal SiO2. However, a hydrogen complexed E´ center known as the 74 G doublet is also detected in the Unibond buried oxides. This defect is not detectable in thermal SiO2 under similar circumstances. Since the presence of 74 G doublet center is generally indicative of very high hydrogen content and since hydrogen is clearly a significant participant in radiation damage, this result suggests a qualitative difference between the radiation response of Unibond and thermal SiO2. Unibond results are also compared and contrasted with similar investigations on separation-by-implanted-oxygen (SIMOX) buried oxides. Although the charge trapping response of Unibond buried oxides may be inferior to that of radiation hardened thermal SiO2, it appears to be more simple and superior to that of SIMOX buried oxides
Keywords :
buried layers; hole traps; paramagnetic resonance; radiation hardening (electronics); silicon-on-insulator; 74 G doublet; E´ centers; Pb centers; SOI; Si-SiO2; Unibond buried oxide; capacitance voltage characteristics; electron spin resonance; hole injection; hydrogen complex; positive charge; radiation damage; trapping centers; Annealing; Capacitance; Electron traps; Etching; Hydrogen; Implants; Paramagnetic resonance; Silicon on insulator technology; Temperature; Wafer bonding;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.556846
Filename :
556846
Link To Document :
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