Title :
CMOS/SOS RAM transient radiation upset and “inversion” effect investigation
Author :
Nikiforov, A.Y. ; Poljakov, I.V.
Author_Institution :
Specialized Electron. Syst., Moscow, Russia
fDate :
12/1/1996 12:00:00 AM
Abstract :
The Complementary Metal-Oxide-Semiconductor/Silicon-on-Sapphire Random Access Memory (CMOS/SOS RAM) transient upset and “inversion” effect were investigated with pulsed laser, pulsed voltage generator and low-intensity light simulators. It was found that the “inversion” of information occurs due to memory cell photocurrents simultaneously with the power supply voltage drop transfer to memory cells outputs
Keywords :
CMOS memory circuits; laser beam effects; random-access storage; CMOS/SOS RAM; inversion effect; light simulator; memory cell photocurrent; power supply voltage drop; pulsed laser; pulsed voltage generator; transient radiation; upset effect; Artificial intelligence; CMOS logic circuits; Optical pulse generation; Power supplies; Pulsed power supplies; Random access memory; Read-write memory; Strips; Testing; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
