DocumentCode :
1319051
Title :
SEU-hardened storage cell validation using a pulsed laser
Author :
Velazco, R. ; Calin, T. ; Nicolaidis, Michael ; Moss, S.C. ; LaLumondiere, S.D. ; Tran, V.T. ; Koga, R.
Author_Institution :
LSR, IMAG, Grenoble, France
Volume :
43
Issue :
6
fYear :
1996
fDate :
12/1/1996 12:00:00 AM
Firstpage :
2843
Lastpage :
2848
Abstract :
Laser tests performed on a prototype chip to validate new SEU-hardened storage cell designs revealed unexpected latch-up and single-event upset phenomena. The investigations that identified their location show the existence of a topology-dependent dual node upset mechanism. Design solutions are suggested to avoid its occurrence
Keywords :
integrated circuit testing; integrated memory circuits; measurement by laser beam; radiation hardening (electronics); SEU hardening; latch-up; pulsed laser testing; single-event upset; storage cell; validation; Aerospace testing; Circuit testing; Laser beams; Microelectronics; Optical design; Optical pulses; Performance evaluation; Prototypes; Pulse circuits; Pulse measurements;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.556875
Filename :
556875
Link To Document :
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