Title :
Increased optical saturation intensities in GaInAs multiple quantum wells by the use of AlGaInAs barriers
Author :
Wood, T.H. ; Chang, T.Y. ; Pastalan, John Z. ; Burrus, C.A. ; Sauer, N.J. ; Johnson, Brett C.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
Quaternary AlGaInAs is demonstrated to be an excellent barrier material for long-wavelength quantum well modulators. In addition to lower trap density than ternary AlInAs, the low valence-band discontinuity results in saturation intensities at least a factor of 30 higher than InGaAs wells with InP barriers. Decreasing barrier thicknesses increases saturation intensities by an additional factor of 5.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; indium compounds; optical modulation; optical saturable absorption; semiconductor quantum wells; AlGaInAs barriers; GaInAs multiple quantum wells; GaInAs-AlGaInAs; electroabsorption saturation; long-wavelength; optical saturation intensities; quantum well modulators; trap density; valence-band discontinuity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910166
