Title :
Void elimination by lateral gap diffusion in silicon direct bonding (SDB) technology
Author :
Tong, Q.-Y. ; Qing, Ming
Author_Institution :
Microelectron. Center, Southeast Univ., Nanjing, China
Abstract :
Voids at bonding seams caused by trapped air pockets during room temperature contacting can be eliminated by lateral gap diffusion. The optimised bonding temperature has been found to be around 1000 degrees C to realise void-free bonding interfaces.
Keywords :
diffusion in solids; elemental semiconductors; microassembling; semiconductor technology; silicon; 1000 degC; Si direct bonding technology; Si wafer; Si/Si direct bonding; bonding seams; lateral gap diffusion; optimised bonding temperature; room temperature contacting; trapped air pockets; void elimination; void-free bonding interfaces;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910182
