DocumentCode
1319210
Title
A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs
Author
Johnson, G.H. ; Galloway, K.F. ; Schrimpf, R.D. ; Titus, J.L. ; Wheatley, C.F. ; Allenspach, M. ; Dachs, C.
Author_Institution
Arizona Univ., Tucson, AZ, USA
Volume
43
Issue
6
fYear
1996
fDate
12/1/1996 12:00:00 AM
Firstpage
2932
Lastpage
2937
Abstract
The single-event-gate-rupture cross-section is measured as a function of drain-source and gate-source bias for some n-channel power MOSFETs. The experimental techniques are explained, and the results are interpreted with the help of two-dimensional computer modeling
Keywords
ion beam effects; power MOSFET; n-channel power MOSFET; single-event-gate-rupture cross-section; two-dimensional computer model; Charge carrier processes; Cranes; Electrodes; FETs; Ion beams; MOSFETs; Neck; Numerical simulation; Power transistors; Silicon;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.556888
Filename
556888
Link To Document