Title :
Fabrication and Energy Band Alignment of n-ZnO/p-CuI Heterojunction
Author :
Ding, K. ; Hu, Q.C. ; Chen, D.G. ; Zheng, Q.H. ; Xue, X.G. ; Huang, F.
Author_Institution :
Key Lab. of Optoelectron. Mater. Chem. & Phys., Fujian Inst. of Res. on the Struct. of Matter, Fuzhou, China
Abstract :
N-ZnO/P-CuI heterojunctions are fabricated by growing undoped n-type ZnO thin films on p-type γ-CuI (111) single-crystal substrates using radio-frequency magnetron sputtering. The ZnO films are identified to be columnar structured with c-axis-preferred orientation by using X-ray diffraction and scanning electron microscope. Measurements of the energy band alignment of ZnO/CuI interface by using X-ray photoelectron spectroscopy result in a valence band offset of 1.74 eV and a conduction band offset of -1.37 eV, meaning a type-II band alignment at the interface. A typical diodelike behavior of the current-voltage curve indicates its possible applications in optoelectronics with further development.
Keywords :
II-VI semiconductors; X-ray diffraction; X-ray photoelectron spectra; conduction bands; copper compounds; p-n heterojunctions; scanning electron microscopy; semiconductor thin films; sputter deposition; texture; valence bands; zinc compounds; X-ray diffraction; X-ray photoelectron spectroscopy; ZnO-CuI; c-axis-preferred orientation; conduction band offset; current-voltage curve; diode-like property; electron volt energy -1.37 eV; electron volt energy 1.74 eV; energy band alignment; heterojunction; optoelectronics; p-type γ-CuI (111) single-crystal substrate; radio-frequency magnetron sputtering; scanning electron microscope; type-II band alignment; undoped n-type thin film; valence band offset; Crystals; Fabrication; Heterojunctions; Light emitting diodes; Substrates; Zinc oxide; CuI; ZnO; heterojunction;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2218274
