Title :
Radiation and postirradiation functional upsets in CMOS SRAM
Author :
Chumakov, A.I. ; Yanenko, A.V.
Author_Institution :
Specialized Electron. Syst., Moscow, Russia
fDate :
12/1/1996 12:00:00 AM
Abstract :
The CMOS SRAM radiation and postirradiation functional upsets are investigated as a function of total dose, dose rate, annealing time and functional tests. Local and conventional X-ray as well as LINAC and Sr-90 irradiation procedures were performed. A model explaining the experimental results is discussed
Keywords :
CMOS memory circuits; SRAM chips; X-ray effects; annealing; beta-ray effects; electron beam effects; CMOS SRAM; LINAC irradiation; Sr-90 irradiation; X-ray irradiation; annealing; dose rate; postirradiation functional upsets; radiation functional upsets; total dose; Annealing; Decoding; Driver circuits; Electrons; Error correction; Linear particle accelerator; MOSFET circuits; Random access memory; Read-write memory; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
