• DocumentCode
    1322207
  • Title

    Double-interdigitated (TIL) bipolar transistor with heavily doped base wells

  • Author

    Silard, A.P. ; Nani, G.

  • Author_Institution
    Dept. of Electron., Polytech. Inst., bucharest
  • Volume
    24
  • Issue
    13
  • fYear
    1988
  • fDate
    6/23/1988 12:00:00 AM
  • Firstpage
    815
  • Lastpage
    817
  • Abstract
    The authors report the development of two interdigitation level (TIL) bipolar transistors with heavily-doped base wells (BW), having the following advantages in comparison with identical conventional devices: (a) an ~18% and ~23% increase of voltages VCEO(sus) and VCBO, respectively; (b) a reduction of the turn-on delay (t d) and rise times (tr) by a factor of ~20; and (c) a two-fold decrease of the fall time t f
  • Keywords
    bipolar transistors; elemental semiconductors; heavily doped semiconductors; semiconductor doping; semiconductor switches; silicon; Si; TIL device; bipolar transistor; heavily doped base wells; semiconductors; switching device; two interdigitation level;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    8352
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1322207