Title :
Wavelength uniformity of 1.3 μm GaInAsP/InP distributed Bragg reflector lasers with hybrid beam/vapour epitaxial growth
Author :
Koch, T.L. ; Corvini, P.J. ; Koren, U. ; Tsang, W.T.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ
fDate :
6/23/1988 12:00:00 AM
Abstract :
The authors report 1.3 μm distributed Bragg reflector (DBR) lasers with a hybrid growth employing base wafers grown by chemical beam epitaxy (CBE), and Fe-doped InP lateral current blocking grown by metal-organic chemical vapour deposition (MOCVD). These lasers display exceptional wavelength uniformity (σ~2.7 Å) across the wafer, and suggest that DBR lasers and vapour/beam growth techniques may be suitable for advanced WDM applications
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical communication equipment; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.3 micron; DBR lasers; GaInAsP-InP; III-V semiconductors; InP:Fe lateral current blocking; MOCVD; WDM applications; chemical beam epitaxy; distributed Bragg reflector lasers; hybrid beam/vapour epitaxial growth; metal-organic chemical vapour deposition; optical communication equipment; semiconductor lasers; wavelength uniformity;
Journal_Title :
Electronics Letters
