DocumentCode :
1322733
Title :
Improved screening ability of ferroelectric- semiconductor interface
Author :
Gureev, M.Y. ; Tagantsev, Alexander K. ; Setter, Nava
Author_Institution :
Ceramics Lab., Swiss Fed. Inst. of Technol. (EPFL), Lausanne, Switzerland
Volume :
58
Issue :
9
fYear :
2011
fDate :
9/1/2011 12:00:00 AM
Firstpage :
1959
Lastpage :
1961
Abstract :
Recent progress in integrating ferroelectrics directly on silicon opens the exciting possibility of implementing ferroelectric-semiconductor devices. One of the major problems for such integration is the instability of the ferroelectric state in very thin films, which is mainly controlled by the screening ability of the ferroelectric-semiconductor interface. We show here that the presence of built-in potential in the semiconductor can strongly influence the screening ability of the interface. The built-in potential depends on the electron affinities and surface states density and can be controlled by choosing the materials carefully.
Keywords :
dielectric polarisation; electron affinity; ferroelectric thin films; semiconductor-insulator boundaries; surface states; electron affinity; ferroelectric-semiconductor device; ferroelectric-semiconductor interface; screening ability; surface state density; thin films; Ceramics; Electric fields; Electric potential; Electrodes; Films; Physics;
fLanguage :
English
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-3010
Type :
jour
DOI :
10.1109/TUFFC.2011.2037
Filename :
6020868
Link To Document :
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