DocumentCode
1322975
Title
Circular MAGFET Design and SNR Optimization for Magnetic Bead Detection
Author
Zhang, Bowei ; Korman, Can E. ; Zaghloul, Mona E.
Author_Institution
Dept. of Electr. & Comput. Eng., George Washington Univ., Washington, DC, USA
Volume
48
Issue
11
fYear
2012
Firstpage
3851
Lastpage
3854
Abstract
A novel circular CMOS MAGFET (Magnetic Field Effect Transistor) design is introduced and a novel device geometry design methodology is proposed to optimize the magnetic particle detection sensitivity of such devices. In order to optimize the signal to noise ratio, it was determined that the geometry of the MAGFET is required to have specific ratios, where its sector angle θ and its inner and outer radii r1 and r2 are optimized when θ/ln(r2/r1) = 1.3 . Compared to the more traditional rectangular MAGFET, the circular MAGFET has compatible SNR peak performance with rectangular MAGET. However, when the size of the MAGFET is scaled down in order to detect smaller magnetic particles, the proposed circular MAGFET has more robust SNR performance, design flexibility and tolerance to processing variations.
Keywords
CMOS integrated circuits; field effect transistors; geometry; magnetic field effects; magnetic particles; optimisation; SNR optimization; SNR peak performance; circular CMOS MAGFET design; circular MAGFET design; design flexibility; device geometry design methodology; magnetic bead detection; magnetic field effect transistor design; magnetic particle detection sensitivity; magnetic particles; processing variations tolerance; rectangular MAGFET; robust SNR performance; sector angle; signal to noise ratio; Geometry; Magnetic circuits; Magnetic sensors; Performance evaluation; Signal to noise ratio; Circular MAGFET; MAGFET; signal-to-noise ratio (SNR);
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2012.2201139
Filename
6333039
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