Title :
Radiation-induced damage in GaAs particle detectors
Author :
Bates, R. ; Via, C. Da ; O´Shea, V. ; Pickford, A. ; Raine, C. ; Smith, K.
Author_Institution :
Dept. of Phys. & Astron., Glasgow Univ., UK
fDate :
10/1/1997 12:00:00 AM
Abstract :
The motivation for investigating the use of GaAs as a material for detecting particles in experiments for high-energy physics (HEP) arose from its perceived resistance to radiation damage. This is a vital requirement for detector materials that are to be used in experiments at future accelerators where the radiation environments would exclude all but the most radiation resistant of detector types
Keywords :
III-V semiconductors; Schottky diodes; gallium arsenide; leakage currents; meson effects; neutron effects; proton effects; semiconductor counters; GaAs; GaAs particle detectors; high-energy physics; radiation-induced damage; Current measurement; Extraterrestrial measurements; Gallium arsenide; Large Hadron Collider; Leakage current; Neutrons; Particle accelerators; Physics; Radiation detectors; Schottky diodes;
Journal_Title :
Nuclear Science, IEEE Transactions on
