DocumentCode
1324005
Title
Improved Ni/SiC Schottky diode formation
Author
Kestle, A. ; Wilks, S.P. ; Dunstan, P.R. ; Pritchard, M. ; Mawby, P.A.
Author_Institution
Semicond. Interfaces Lab., Univ. of Wales, Swansea, UK
Volume
36
Issue
3
fYear
2000
fDate
2/3/2000 12:00:00 AM
Firstpage
267
Lastpage
268
Abstract
The authors report for the first time the effect of a post deposition anneal on ultra-high vacuum (UHV) and high vacuum (HV) formed Ni/SiC Schottky diodes. The anneal is shown to increase the Schottky barrier height by between 0.17 and 0.3 eV. In addition, the ideality of the diodes is also significantly improved
Keywords
Schottky diodes; annealing; nickel; silicon compounds; vacuum deposited coatings; wide band gap semiconductors; Ni-SiC; Ni/SiC Schottky diode; Schottky barrier height; annealing; high vacuum deposition; ideality factor; ultra-high vacuum deposition;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20000244
Filename
836577
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