Title :
Analysis of Commercial Punch-Through IGBTs Behavior Under
Co Irradiation: Turn-Off Switching Performances Evolution
Author :
Tala-Ighil, Boubekeur ; Oukaour, Amrane ; Gualous, Hamid ; Boudart, Bertrand ; Pouderoux, Bertrand ; Trolet, Jean-Lionel ; Piccione, Marc
Author_Institution :
Univ. de Caen Basse-Normandie, Cherbourg-Octeville, France
Abstract :
This paper deals with the effects of 60Co gamma irradiation on punch-through commercial insulated gate bipolar transistors turn-off switching behavior. The response of the threshold voltage, the gate-emitter leakage current, the collector leakage current, the collector-emitter breakdown voltage and the turn-off switching parameters under three different in situ gate biases are described. Charge trapping in the gate oxide causes the decrease of the threshold voltage. It is shown that the decrease of this parameter and the modifications in the Miller plateau level and width result in an increase of the turn-off delay time, the collector current fall-time, the collector-emitter voltage rise-time, and consequently an increase of the turn-off switching losses and a decrease of the turn-off overshoot collector-emitter voltage.
Keywords :
insulated gate bipolar transistors; leakage currents; power semiconductor switches; 60Co gamma irradiation; Miller plateau level; collector current fall-time; collector leakage current; collector-emitter breakdown voltage; collector-emitter voltage rise-time; commercial punch-through IGBT behavior; gate-emitter leakage current; insulated gate bipolar transistors; threshold voltage; turn-off delay time; turn-off overshoot collector-emitter voltage; turn-off switching losses; turn-off switching performance evolution; Insulated gate bipolar transistors; Leakage current; Radiation effects; Temperature measurement; Threshold voltage; Insulated gate bipolar transistor; total ionizing dose; turn-off switching parameters;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2216289