Linear crosstalk in 4×4 semiconductor optical amplifier gate switch matrix

Author

Larsen, Claus Popp ; Gustavsson, Mats

Author_Institution

Ericsson Components AB, Stockholm, Sweden

Volume

15

Issue

10

fYear

1997

fDate

10/1/1997 12:00:00 AM

Firstpage

1865

Lastpage

1870

Abstract

We report a comprehensive crosstalk investigation of a packaged InGaAsP/InP 4×4 semiconductor optical amplifier gate switch matrix, experimentally as well as theoretically. For a fully loaded switch with the same wavelength on all four inputs, all possible switching combinations are analyzed, thus yielding realistic crosstalk figures. Coherent and incoherent crosstalk phenomena are identified, and a switch crosstalk less than -40 dB has been measured

Keywords

III-V semiconductors; gallium arsenide; indium compounds; optical crosstalk; photonic switching systems; semiconductor device packaging; semiconductor laser arrays; wavelength division multiplexing; 4×4 semiconductor optical amplifier gate switch matrix; InGaAsP-InP; coherent crosstalk phenomena; fully loaded switch; incoherent crosstalk phenomena; linear crosstalk; optical WDM network; packaged 4 by 4 semiconductor optical amplifier gate switch matrix; switching combinations; Optical crosstalk; Optical fiber networks; Optical filters; Optical interferometry; Optical switches; Optical waveguides; Semiconductor device packaging; Semiconductor optical amplifiers; Stimulated emission; Transmission line matrix methods;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.633575

Filename

633575