Title :
Ion-beam-induced epitaxial crystallisation (IBIEC) of amorphous silicon layers produced by chemical vapour deposition
Author :
Skorupa, Wolfgang ; Voelskow, M. ; MatthÄi, J. ; Knothe, P.
Author_Institution :
Central Inst. for Nucl. Res., Acad. of Sci., Dresden, East Germany
fDate :
7/7/1988 12:00:00 AM
Abstract :
Amorphous silicon layers deposited by chemical vapour deposition on monocrystalline silicon substrates were epitaxially recrystallised by ion beam induced epitaxial crystallisation at 400°C after preamorphisation of the transition region layer/substrate. In this manner, a layer with a thickness of 400 nm was recrystallised by implanting silicon ions at 330 keV with a dose of about 1×1017 cm-2
Keywords :
CVD coatings; amorphous semiconductors; elemental semiconductors; epitaxial growth; ion implantation; recrystallisation; semiconductor epitaxial layers; semiconductor growth; silicon; 330 keV; 400 degC; 400 nm; Si ion implantation; amorphous Si deposition; chemical vapour deposition; elemental semiconductors; epitaxial-recrystallisation; ion beam induced epitaxial crystallisation; monocrystalline Si substrates; preamorphisation; semiconductor growth; solid phase epitaxy; transition region layer/substrate;
Journal_Title :
Electronics Letters
