Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode

Author

Jae-Gil Lee ; Bong-Ryeol Park ; Chun-Hyung Cho ; Kwang-Seok Seo ; Ho-Young Cha

Author_Institution

Sch. of Electron. & Electr. Eng., Hongik Univ., Seoul, South Korea

Volume

34

Issue

2

fYear

2013

fDate

Feb. 2013

Firstpage

214

Lastpage

216

Abstract

A novel AlGaN/GaN-on-Si rectifier with a gated ohmic anode has been proposed to reduce the turn-on voltage without breakdown-voltage degradation. The combination of an ohmic anode and a recessed Schottky gate is responsible for the low turn-on voltage and thus increases the forward current. In comparison with conventional Schottky diodes, the forward current at 1.5 V was increased by 2 to 3 times, whereas no breakdown-voltage degradation was observed. The proposed rectifier with an anode-to-cathode distance of 18 μm exhibited a turn-on voltage of 0.37 V, a forward current density of 92 mA/mm at 1.5 V, and a breakdown voltage of 1440 V.

Keywords

Schottky diodes; aluminium compounds; elemental semiconductors; gallium compounds; rectifiers; silicon; AlGaN-GaN; Schottky diodes; Schottky gate; Si; forward current density; gated ohmic anode; low turn-on voltage rectifier; voltage 0.37 V; voltage 1.5 V; voltage 1440 V; Aluminum gallium nitride; Anodes; Breakdown voltage; Gallium nitride; HEMTs; Logic gates; Schottky barriers; AlGaN/GaN-on-Si; breakdown voltage; gated ohmic anode; rectifier; turn-on voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2235403

Filename

6413168