Bi-directional PHEV battery charger based on normally-off GaN-on-Si multi-chip module

Author

Lingxiao Xue ; Zhiyu Shen ; Mingkai Mu ; Boroyevich, Dushan ; Burgos, Rolando ; Hughes, Brian ; Mattavelli, Paolo

Author_Institution

Center for Power Electron. Syst., Virginia Tech, Blacksburg, VA, USA

fYear

2014

fDate

16-20 March 2014

Firstpage

1662

Lastpage

1668

Abstract

A high frequency, high efficiency bi-directional battery charger for Plug-in Hybrid Electric Vehicle (PHEV) is built with high voltage normally-off GaN-on-Si HFETs. The battery charger topology consists of a 500 kHz Full Bridge (FB) AD/DC stage and a 500 kHz Dual Active Bridge (DAB) DC/DC stage. The system functionality is verified and measured efficiency is 97% for the AC/DC stage and 97.2% for the DC/DC stage, which leads to a total efficiency 94.2%. By doing sinusoidal charging, the DC link capacitance can be reduced to much less than one third but efficiency will drop to 92.0%.

Keywords

III-V semiconductors; battery chargers; battery powered vehicles; elemental semiconductors; gallium compounds; high electron mobility transistors; hybrid electric vehicles; multichip modules; silicon; wide band gap semiconductors; DAB; DC link capacitance; GaN; HFETs; Si; battery charger topology; bidirectional PHEV battery charger; dual active bridge DC-DC stage; efficiency 94.2 percent; efficiency 97 percent; efficiency 97.2 percent; frequency 500 MHz; full bridge AD-DC stage; high frequency high efficiency bidirectional battery charger; normally-off multichip module; plug-in hybrid electric vehicle; sinusoidal charging; system functionality; Batteries; Bridge circuits; Capacitance; Gallium nitride; Inductors; Switches; Zero voltage switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE

Conference_Location

Fort Worth, TX

Type

conf

DOI

10.1109/APEC.2014.6803529

Filename

6803529