DocumentCode
1328146
Title
Robust High-Resistance State and Improved Endurance of 
Resistive Memory by Suppression of Current Overshoot
Author
Chen, Yu-Sheng ; Lee, Heng-Yuan ; Chen, Pang-Shiu ; Liu, Wen-Hsing ; Wang, Sum-Min ; Gu, Pei-Yi ; Hsu, Yen-Ya ; Tsai, Chen-Han ; Chen, Wei-Su ; Chen, Frederick ; Tsai, Ming-Jinn ; Lien, ZChenhsin
Author_Institution
Electron. & Optoelectron. Res. Lab., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Volume
32
Issue
11
fYear
2011
Firstpage
1585
Lastpage
1587
Abstract
The effect of operation current on the high-resistance state and the endurance for the HfOx-based resistive device is comprehensively studied. Due to the current overshoot by the parasitic capacitances, an excess current leakage for the high resistance state of the 1R device after the forming and SET stages is observed. The accelerated degradation of the high-resistance state for the HfOx device undergoing a high-operation-current stage is revealed for the first time. As the compliance current increases beyond 500 μA, the resistance of the high-resistance state of the device deceases drastically. A possible scenario about the correlation between the high-resistance state and the compliance current based on the filament model is proposed. By suppressing the current overshoot with the 1T1R device, the high-resistance state (>; 1 MΩ) and excellent endurance (>; 108 cycles) for the HfOx resistive memory are demonstrated.
Keywords
hafnium compounds; random-access storage; HfO; compliance current; current overshoot; filament model; resistive memory; robust high-resistance state; Current measurement; Degradation; Hafnium compounds; Resistance; Switches; Transistors; $hbox{HfO}_{X}$
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2011.2166051
Filename
6026898
Link To Document