Pocket Implant-Dependent Channel Mobility in Advanced p-MOSFETs With Strain Engineering

Author

Choi, Youn Sung ; Ekbote, Shashank ; Baldwin, Greg

Author_Institution

Texas Instrum., Dallas, TX, USA

Volume

32

Issue

11

fYear

2011

Firstpage

1471

Lastpage

1473

Abstract

A new approach to channel mobility engineering using strained-Si technology is described with a complete data analysis. It is discussed that [110]/(100) Si channel mobility in p-MOSFET with embedded SiGe source/drain and compressive stress liner can be strongly dependent on pocket implant dose, resulting from a change in piezoresistance coefficient as a function of p-type carrier dopant concentration in the vicinity of the channel, whereas channel mobility of n-MOSFETs shows weaker dependence on pocket implant dose due to: 1) smaller piezoresistance coefficient of n-channel and 2) less channel strain relative to p-MOSFETs.

Keywords

Ge-Si alloys; MOSFET; carrier mobility; doping profiles; piezoresistance; SiGe; compressive stress liner; embedded SiGe source/drain; n-MOSFET; p-MOSFET; p-type carrier dopant concentration; piezoresistance coefficient; pocket implant dose; pocket implant-dependent channel mobility; strain engineering; strained-Si technology; ISO; Implants; MOS devices; MOSFET circuits; Piezoresistance; Silicon; Strain; Channel mobility; piezoresistance; pocket implant and strained Si;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2163919

Filename

6026899