Design, Fabrication, and Characterization of a 3-D CMOS Fluxgate Magnetometer

A dual-core 3-D microfluxgate magnetometer fabricated by a simple and inexpensive fabrication process is described in this paper. The microfluxgate is able to operate along a nearly linear V-B relationship at the second harmonic frequency and features good characteristics of high sensitivity and low noise response. These characteristic results indicate a field-to-voltage transfer coefficient of 11 V/T measured at the second harmonic frequency, power consumption of 67.3 mW, and a field noise response less than 12 nT/√ Hz at 1 Hz. In brief, our proposed device not only enhances responsivity capability and linear V-B characteristics, but also is CMOS process compatible, which is considered both function-efficient and cost-effective.