Comparison of high power semiconductor devices losses in 5MW PMSG MV wind turbines

This paper provides a comparison of high power semiconductor devices in 5MW-class Permanent Magnet Synchronous Generator (PMSG) Medium Voltage (MV) wind turbines. High power semiconductor devices of IGCT, module type IGBT, press-pack type IGBT, and press-pack type IEGT of both 4.5kV and 6.5kV are considered in this paper. Benchmarking is performed based on neutral point clamped 3-level back-to-back type voltage source converter supplied from grid voltage of 4160V. The feasible number of semiconductor devices in parallel is designed through the loss analysis considering both conduction and switching losses under the given operating conditions of 5MW-class PMSG wind turbines, particularly for the application in offshore wind farms. The loss analysis is confirmed through PLECS simulations. The comparison result shows that press-pack type IGBT and IGCT semiconductor device have the highest efficiency considering the snubber loss of IGCT.