Title :
GaN/AlGaN high electron mobility transistors with fτ of 110 GHz
Author :
Micovic, M. ; Nguyen, N.X. ; Janke, P. ; Wong, W.-S. ; Hashimoto, P. ; McCray, L.-M. ; Nguyen, C.
Author_Institution :
LLC, HRL Labs., Malibu, CA, USA
fDate :
2/17/2000 12:00:00 AM
Abstract :
The performance of 50 nm gate length GaN/AlGaN HEMTs is reported. The device layers were grown by MBE directly onto an SiC substrate. Devices exhibit a maximum drain current density of 1.2 A/mm, an extrinsic fτ of 110 GHz and an fmax of over 140 GHz. The fτ of 110 GHz is the highest reported to date for a GaN/AlGaN HEMT, a nearly 50% increase over the previous record
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; high electron mobility transistors; 110 GHz; 50 nm; GaN-AlGaN; HEMT; III-V semiconductors; SiC; drain current density; gate length; high electron mobility transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000296
