Title :
Ultrathin polyoxide grown by electron cyclotron resonance N2 O plasma
Author :
Han, Sangyeon ; Lee, Jongho ; Shin, Hyungcheol
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
fDate :
2/17/2000 12:00:00 AM
Abstract :
A process has been developed for growing ultrathin oxide on a poly-silicon layer at low temperature by using electron cyclotron resonance (ECR) N2O plasma. Sub-4 nm thick polyoxides on n + and p+ polysilicon layers were grown and characterised. The oxides have large breakdown voltage and small charge trapping. QBD values of up to 7 C/cm2 for polyoxide on p+ polysilicon and up to 5 C/cm2 for polyoxide on n+ polysilicon were obtained
Keywords :
MOS capacitors; electron traps; elemental semiconductors; insulating thin films; plasma CVD; semiconductor device breakdown; silicon; LPCVD; MOS capacitors; N2O; Si-SiO2; breakdown voltage; charge trapping; electron cyclotron resonance plasma; ultrathin polyoxide;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000307
