DocumentCode :
133007
Title :
Analysis of high-speed PCB with SiC devices by investigating turn-off overvoltage and interconnection inductance influence
Author :
Noppakunkajorn, Jukkrit ; Di Han ; Sarlioglu, Bulent
Author_Institution :
Wisconsin Electr. Machines & Power Electron. Consortium, Univ. of Wisconsin-Madison, Madison, WI, USA
fYear :
2014
fDate :
16-20 March 2014
Firstpage :
2628
Lastpage :
2631
Abstract :
The purpose of this paper is to analyze the impact of interconnection inductances to overvoltage during turn-off transient of silicon carbide (SiC) devices. To understand the switching behavior of the SiC devices, the ringing and overshoots of the voltage caused by the device capacitance and interconnection inductances are considered. Parametric studies are conducted to compare the influences of printed circuit board (PCB) and packaging inductances on the peak turn-off overvoltage under various operating conditions. A prototype half-bridge buck converter with SiC MOSFETs is constructed for the experiments. Experimental results are shown to validate the simulation results.
Keywords :
MOSFET; bridge circuits; overvoltage; power convertors; printed circuit interconnections; silicon compounds; transients; MOSFET; SiC; device capacitance; half-bridge buck converter; high-speed PCB; interconnection inductance; packaging inductance; printed circuit board; turn-off overvoltage; turn-off transient; Inductance; Integrated circuit interconnections; Integrated circuit modeling; Silicon carbide; Switches; Transient analysis; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE
Conference_Location :
Fort Worth, TX
Type :
conf
DOI :
10.1109/APEC.2014.6803675
Filename :
6803675
Link To Document :
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