Title :
Electric Field Effects in Semiconductor Spin Transport—A Transfer Matrix Formalism
Author :
Roy, A.M. ; Nikonov, Dmitri E. ; Saraswat, Krishna C.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
A transfer matrix method for simulating spin injection into semiconductors in the case of high electric fields has been developed. The nonlinear relationship between electron spin density and electrochemical potential splitting, the effect of electric field on spin diffusion lengths, and spin polarized drift current are accounted for. Using this approach, high magnetoresistance (MR) at high electric fields is predicted. This is due to spin accumulation reaching its extreme values for fermion statistics. This effect opens up a new direction for solving the problem of low MR that semiconductor spintronic devices are facing.
Keywords :
III-V semiconductors; electric field effects; elemental semiconductors; gallium arsenide; magnetoelectronics; magnetoresistance; silicon; spin dynamics; spin polarised transport; statistical analysis; GaAs; Si; electric field effects; electrochemical potential splitting; electron spin density; fermion statistics; high electric fields; high magnetoresistance; semiconductor spin transport; semiconductor spintronic devices; spin accumulation; spin diffusion lengths; spin injection; spin polarized drift current; transfer matrix method; Electric potential; Equations; Mathematical model; Metals; Semiconductor device modeling; Silicon; Spin polarized transport; Magnetoresistance (MR); semiconductor spintronics; spin transport;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2011.2151843
