DocumentCode :
1331064
Title :
A physical model for the kink effect in InAlAs/InGaAs HEMTs
Author :
Somerville, Mark H. ; Ernst, Alexander ; Del Alamo, JesÙs A.
Author_Institution :
Dept. of Phys. & Astron., Vassar Coll., Poughkeepsie, NY, USA
Volume :
47
Issue :
5
fYear :
2000
fDate :
5/1/2000 12:00:00 AM
Firstpage :
922
Lastpage :
930
Abstract :
We present a new model for the the kink effect in InAlAs/InGaAs HEMTs. The model suggests that the kink is due to a threshold voltage shift which arises from a hole pile-up in the extrinsic source and an ensuing charging of the surface and/or the buffer-substrate interface. The model captures many of the observed behaviors of the kink, including the kink´s dependence on bias, time, temperature, illumination, and device structure. Using the model, we have developed a simple equivalent circuit, which reproduced well the kink´s dc characteristics, its time evolution in the nanosecond range, and its dependence on illumination
Keywords :
III-V semiconductors; aluminium compounds; equivalent circuits; gallium arsenide; high electron mobility transistors; hole density; indium compounds; semiconductor device models; HEMTs; III-V semiconductors; InAlAs-InGaAs; buffer-substrate interface; dc characteristics; equivalent circuit; extrinsic source; hole pile-up; illumination; kink effect; physical model; threshold voltage shift; time evolution; Computational modeling; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Insulation; Lighting; MODFETs; Silicon on insulator technology; Threshold voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.841222
Filename :
841222
Link To Document :
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