1.3-μm AlGaInAs-InP buried-heterostructure lasers with mode profile converter

Author

Takemasa, K. ; Kubota, M. ; Wada, H.

Author_Institution

Opto-Electron. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan

Volume

12

Issue

5

fYear

2000

fDate

5/1/2000 12:00:00 AM

Firstpage

471

Lastpage

473

Abstract

AlGaInAs buried-heterostructure (BH) lasers with a mode profile converter (MPC) have been successfully fabricated for the first time. The thickness of the multiple-quantum-well (MQW) waveguide was vertically tapered by selective area growth (SAG). The threshold current I/sub th/ was 14.6 mA with a 600-μm-long cavity and a high-reflective-coated rear facet. The full-width at half-maximum of the far-field pattern in the perpendicular and horizontal directions were 9.2/spl deg/ and 12.6/spl deg/, respectively. The optical coupling loss between lasers with MPC and a single-mode fiber was 3.0 dB when the distance between the laser and fiber was 20 μm.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; gallium arsenide; integrated optics; laser modes; optical fibre couplers; optical losses; quantum well lasers; vapour phase epitaxial growth; waveguide lasers; 1.3 mum; 14.6 mA; 600 mum; AlGaInAs-InP; AlGaInAs-InP buried-heterostructure lasers; far-field pattern; high-reflective-coated rear facet; horizontal direction; mode profile converter; multiple-quantum-well waveguide thickness; optical coupling loss; perpendicular direction; selective area growth; single-mode fiber; threshold current; vertical tapering; Fiber lasers; Laser modes; Optical materials; Optical waveguides; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature; Threshold current; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.841256

Filename

841256