DocumentCode
1332007
Title
DC electroluminescence from PECVD grown thin films of silicon-rich silica
Author
Trwoga, P.F. ; Kenyon, A.J. ; Pitt, C.W.
Volume
32
Issue
18
fYear
1996
fDate
8/29/1996 12:00:00 AM
Firstpage
1703
Abstract
The authors report the fabrication of an electroluminescent MOS device using microclustered silicon in silica as the active layer. A DC electroluminescence spectrum is shown and compared with photoluminescence from the same material. A current-voltage curve is presented which shows weak rectifying behaviour and is consistent with a space-charge limited structure with a high resistivity layer
Keywords
MIS devices; electroluminescence; electroluminescent devices; insulating thin films; plasma CVD coatings; silicon compounds; space-charge limited devices; Au-SiO-Si; DC electroluminescence; I-V curve; PECVD grown thin films; Si-rich silica; SiOx films; current-voltage curve; electroluminescence spectrum; electroluminescent MOS device; fabrication; high resistivity layer; microclustered Si; photoluminescence; space-charge limited structure; weak rectifying behaviour;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19961122
Filename
533397
Link To Document