Title :
1.5 μm wavelength, SCH-MQW InGaAsP/InP broadened-waveguide laser diodes with low internal loss and high output power
Author :
Garbuzov, D. ; Xu, Lie ; Forrest, Stephen R. ; Menna, R. ; Martinelli, R. ; Connolly, J.C.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ
fDate :
8/29/1996 12:00:00 AM
Abstract :
Reduction of internal loss and a twofold increase of differential efficiency have been obtained for 1.5 μm wavelength InGaAsP/InP separate confinement multiquantum well long cavity lasers with broadened waveguides. A record CW output power of 4.6 W has been demonstrated for a laser with a 200 μm aperture
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser transitions; optical losses; quantum well lasers; waveguide lasers; 1.5 micron; 200 micron; 4.6 W; CW output power; InGaAsP-InP; MQW long cavity lasers; SCH-MQW LD; broadened waveguides; broadened-waveguide laser diodes; differential efficiency; high output power; low internal loss; multiquantum well laser; separate confinement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961098
