DocumentCode
133207
Title
Trap-assisted tunneling in InGaN/GaN LEDs: Experiments and physics-based simulation
Author
Mandurrino, M. ; Verzellesi, G. ; Goano, Michele ; Vallone, M.E. ; Bertazzi, Francesco ; Ghione, G. ; Meneghini, Matteo ; Meneghesso, Gaudenzio ; Zanoni, Enrico
Author_Institution
Dipt. di Elettron. e Telecomun., Politec. di Torino, Turino, Italy
fYear
2014
fDate
1-4 Sept. 2014
Firstpage
13
Lastpage
14
Abstract
We present results from a combined experimental and numerical investigation of a blue InGaN/GaN LED test structure grown on a SiC substrate, confirming that tunneling represents a critical contribution to the sub-threshold forward-bias current and discussing the relative importance of different trap-assisted electron tunneling processes.
Keywords
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; radiation pressure; semiconductor device models; semiconductor device testing; silicon compounds; wide band gap semiconductors; InGaN-GaN; LED; SiC; physics-based simulation; trap-assisted tunneling; Electron traps; Gallium nitride; Light emitting diodes; Reliability; Silicon carbide; Substrates; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on
Conference_Location
Palma de Mallorca
ISSN
2158-3234
Print_ISBN
978-1-4799-3681-6
Type
conf
DOI
10.1109/NUSOD.2014.6935332
Filename
6935332
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